Author

Law M

University of Florida - Cited by 4,754

Biography

Dr .Law M Department of Health Sciences, Faculty of Applied Health Sciences, Brock University, St.Catharines, Ontario, Canada.Dr .Law M is interested in research work in Health ; Medicine . 
Title
Cited by
Year
Ionizing radiation damage effects on GaN devices
SJ Pearton, F Ren, E Patrick, ME Law, AY PolyakovECS Journal of solid state science and technology 5 (2), Q35, 2015201
300
2015
ColdFlux superconducting EDA and TCAD tools project: Overview and progress
CJ Fourie, K Jackman, MM Botha, S Razmkhah, P Febvre, CL Ayala, Q Xu, ...IEEE Transactions on Applied Superconductivity 29 (5), 1-7, 2019201
59
2019
Thermal simulations of high current β-Ga2O3 Schottky rectifiers
R Sharma, E Patrick, ME Law, J Yang, F Ren, SJ PeartonECS Journal of Solid State Science and Technology 8 (7), Q3195, 2019201
34
2019
Comparison of dual-stack dielectric field plates on β-Ga2O3 Schottky rectifiers
PH Carey, J Yang, F Ren, R Sharma, M Law, SJ PeartonECS Journal of Solid State Science and Technology 8 (7), Q3221, 2019201
34
2019
Damage recovery and dopant diffusion in Si and Sn ion implanted β-Ga2O3
MJ Tadjer, C Fares, NA Mahadik, JA Freitas, D Smith, R Sharma, ME Law, ...ECS Journal of Solid State Science and Technology 8 (7), Q33, 2019201
31
2019
Effect of probe geometry during measurement of> 100 A Ga2O3 vertical rectifiers
R Sharma, M Xian, C Fares, ME Law, M Tadjer, KD Hobart, F Ren, ...Journal of Vacuum Science & Technology A 39 (1), 2021202
31
2021
Effects of fluorine incorporation into β-Ga2O3
J Yang, C Fares, F Ren, R Sharma, E Patrick, ME Law, SJ Pearton, ...Journal of Applied Physics 123 (16), 2018201
28
2018
The role of annealing ambient on diffusion of implanted Si in β-Ga2O3
R Sharma, ME Law, C Fares, M Tadjer, F Ren, A Kuramata, SJ PeartonAIP Advances 9 (8), 2019201
28
2019
Diffusion of implanted Ge and Sn in β-Ga2O3
R Sharma, ME Law, M Xian, M Tadjer, EA Anber, D Foley, AC Lang, ...Journal of Vacuum Science & Technology B 37 (5), 2019201
24
2019
High electron mobility transistors with improved heat dissipation
F Ren, SJ Pearton, ME Law, Y HwangUS Patent 10,312,358, 191
20
2019
dopant selection considerations and equilibrium thermal processing limits for n+-In0. 53Ga0. 47As
AG Lind, HL Aldridge, C Hatem, ME Law, KS JonesECS Journal of Solid State Science and Technology 5 (5), Q125, 161
20
2016
Thermal stability of implanted or plasma exposed deuterium in single crystal Ga2O3
S Ahn, F Ren, E Patrick, ME Law, SJ PeartonECS Journal of Solid State Science and Technology 6 (2), Q3026, 161
20
2016
Deuterium incorporation and diffusivity in plasma-exposed bulk Ga2O3
S Ahn, F Ren, E Patrick, ME Law, SJ Pearton, A KuramataApplied Physics Letters 109 (24), 161
20
2016
Optimization of edge termination techniques for β-Ga2O3 Schottky rectifiers
R Sharma, EE Patrick, ME Law, F Ren, SJ PeartonECS Journal of Solid State Science and Technology 8 (12), Q234, 191
20
2019
Diffusion of dopants and impurities in β-Ga2O3
R Sharma, ME Law, F Ren, AY Polyakov, SJ PeartonJournal of Vacuum Science & Technology A 39 (6), 212
20
2021
N-type doping strategies for InGaAs
H Aldridge Jr, AG Lind, CC Bomberger, Y Puzyrev, JMO Zide, ...Materials Science in Semiconductor Processing 62, 171-179, 2017201
15
2017
Extraction of migration energies and role of implant damage on thermal stability of deuterium in Ga2O3
R Sharma, E Patrick, ME Law, S Ahn, F Ren, SJ Pearton, A KuramataECS Journal of Solid State Science and Technology 6 (12), P794, 2017201
14
2017
Simulation of deep-level trap distributions in AlGaN/GaN HEMTs and its influence on transient analysis of drain current
S Mukherjee, EE Patrick, ME LawECS Journal of Solid State Science and Technology 6 (11), S3093, 2017201
12
2017
Nitrogen ion-implanted resistive regions for edge termination of vertical Ga2O3 rectifiers
X Xia, M Xian, C Fares, R Sharma, ME Law, F Ren, SJ PeartonJournal of Vacuum Science & Technology A 39 (6), 2021202
10
2021
Optimization of GaN-based HEMTs for chemical sensing: A simulation study
M Sciullo, M Choudhury, E Patrick, ME LawECS Transactions 75 (16), 259, 2016201
10
2016

Referred From: https://scholar.google.co.in/citations?user=jfVca1QAAAAJ&hl=en

Cited by
Citations 4754
h-index 34
i10-index 120
Recommended Journals
Open Access Journals