Author

Jordan Lang

Staff Scientist, Solar Junction - Cited by 972 - Device Physics - LEDs - Semiconductors - Photovoltaics - Optoelectronics

Biography

Systems engineer specializing in DFSS (Design for Six Sigma) methodologies with experience in the product life cycle including requirements definition, prototyping, proof of concept, design, testing, and documentation. • Experienced working in a fast paced work environment • Experienced working with multi-disciplinary teams • Implementation of Design Controls • Extensive experience in executing process verification and validation activities  
Title
Cited by
Year
High quantum efficiency InGaN/GaN multiple quantum well solar cells with spectral response extending out to 520 nm
RM Farrell, CJ Neufeld, SC Cruz, JR Lang, M Iza, S Keller, S Nakamura, ...Applied Physics Letters 98 (20), 2011201
151
2011
Indium and impurity incorporation in InGaN films on polar, nonpolar, and semipolar GaN orientations grown by ammonia molecular beam epitaxy
DA Browne, EC Young, JR Lang, CA Hurni, JS SpeckJournal of Vacuum Science & Technology A 30 (4), 2012201
106
2012
Comparison of GaAsP solar cells on GaP and GaP/Si
JR Lang, J Faucher, S Tomasulo, K Nay Yaung, M Larry LeeApplied Physics Letters 103 (9), 2013201
98
2013
Carrier escape mechanism dependence on barrier thickness and temperature in InGaN quantum well solar cells
JR Lang, NG Young, RM Farrell, YR Wu, JS SpeckApplied Physics Letters 101 (18), 2012201
92
2012
Effect of doping and polarization on carrier collection in InGaN quantum well solar cells
CJ Neufeld, SC Cruz, RM Farrell, M Iza, JR Lang, S Keller, S Nakamura, ...Applied Physics Letters 98 (24), 2011201
87
2011
GaAsP solar cells on GaP/Si with low threading dislocation density
KN Yaung, M Vaisman, J Lang, ML LeeApplied Physics Letters 109 (3), 2016201
85
2016
High external quantum efficiency and fill-factor InGaN/GaN heterojunction solar cells grown by NH3-based molecular beam epitaxy
JR Lang, CJ Neufeld, CA Hurni, SC Cruz, E Matioli, UK Mishra, JS SpeckApplied Physics Letters 98, 131115, 2011201
80
2011
pn junctions on Ga-face GaN grown by NH3 molecular beam epitaxy with low ideality factors and low reverse currents
CA Hurni, O Bierwagen, JR Lang, BM McSkimming, CS Gallinat, ...Applied Physics Letters 97 (22), 222113, 2010201
55
2010
Effects of growth temperature on Mg-doped GaN grown by ammonia molecular beam epitaxy
CA Hurni, JR Lang, PG Burke, JS SpeckApplied Physics Letters 101 (10), 2012201
38
2012
Towards high efficiency GaAsP solar cells on (001) GaP/Si
KN Yaung, JR Lang, ML Lee2014 IEEE 40th Photovoltaic Specialist Conference (PVSC), 0831-0835, 2014201
33
2014
Comparison of single junction AlGaInP and GaInP solar cells grown by molecular beam epitaxy
T Masuda, S Tomasulo, JR Lang, ML LeeJournal of Applied Physics 117 (9), 2015201
28
2015
Advances in dilute nitride multi-junction solar cells for space power applications
F Suarez, T Liu, A Sukiasyan, J Lang, E Pickett, E Lucow, T Bilir, S Chary, ...E3S Web of Conferences 16, 03006, 2017201
23
2017
NH3-rich growth of InGaN and InGaN/GaN superlattices by NH3-based molecular beam epitaxy
JR Lang, JS SpeckJournal of Crystal Growth 346, 50-55, 2012201
23
2012
Defect selective etching of GaAsyP1− y photovoltaic materials
KN Yaung, S Tomasulo, JR Lang, J Faucher, ML LeeJournal of crystal growth 404, 0-5, 202
14
2014
Effects of growth temperature and device structure on GaP solar cells grown by molecular beam epitaxy
M Vaisman, S Tomasulo, T Masuda, JR Lang, J Faucher, ML LeeApplied Physics Letters 106 (6), 2015201
12
2015
High efficiency multijunction photovoltaic cells
F Suarez, T Liu, HB Yuen, DT Bilir, A Sukiasyan, J LangUS Patent App. 14/887,021, 2017201
9
2017
Optimization of annealing process for improved InGaN solar cell performance
NC Das, ML Reed, AV Sampath, H Shen, M Wraback, RM Farrell, M Iza, ...Journal of electronic materials 42, 346-340, 2013201
7
2013
InGaN-based solar cells and high-performance broadband optical coatings for ultrahigh efficiency hybrid multijunction device designs
RM Farrell, DJ Friedman, NG Young, EE Perl, N Singh, JR Lang, ...CLEO: Applications and Technology, ATh4N. 4, 2013201
6
2013
Molecular beam epitaxy of nitrides for advanced electronic materials
G Koblmüller, JR Lang, EC Young, JS SpeckHandbook of Crystal Growth, 705-754, 2015201
6
2015
GaAsP solar cells on GaP/Si grown by molecular beam epitaxy
JR Lang, J Faucher, S Tomasulo, KN Yaung, ML Lee2013 IEEE 39th Photovoltaic Specialists Conference (PVSC), 2100-210, 2013201
4
2013

Referred From: https://scholar.google.com/citations?user=zeSHjeMAAAAJ&hl=en

Cited by
Citations 972
h-index 14
i10-index 15
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